沟槽栅场截止型(trench-gate field-stop)IGBT:第一代(美蓓亚三美)
型号 | 产品资料 | 集电极/发射极耐压 VCES [V] | 集电极电流 IC [A] | 饱和电压 VCE(sat) @Tj=25deg C 标准 [V] | 饱和电压 VCE(sat) @Tj=25deg C 上限 [V] | 门极电压 VGES [V] | 阈值电压 VGE(th) 下限 [V] | 阈值电压 VGE(th) 上限 [V] | 芯片尺寸 X [mm] | 芯片尺寸 Y [mm] | 键合温度 Tj [℃] |
---|---|---|---|---|---|---|---|---|---|---|---|
MMJ65A0A00xx | MMJ65A0A00xx_E.pdf | 650 | 100 | 1.50 | 1.80 | -30~30 | 5.00 | 6.80 | 7.80 | 7.80 | -40~175 |
MMJ65A5A00xx | MMJ65A5A00xx_E.pdf | 650 | 150 | 1.50 | 1.80 | -30~30 | 5.00 | 6.80 | 9.30 | 9.30 | -40~175 |
MMJ65B0A00xx | MMJ65B0A00xx_E.pdf | 650 | 200 | 1.50 | 1.80 | -30~30 | 5.00 | 6.80 | 10.60 | 10.60 | -40~175 |
MMJ65A0A02xx | MMJ65A0A02xx_E.pdf | 650 | 100 | 1.30 | 1.60 | -30~30 | 5.00 | 6.80 | 7.80 | 7.80 | -40~175 |
MMJ65A5A02xx | MMJ65A5A02xx_E.pdf | 650 | 150 | 1.30 | 1.60 | -30~30 | 5.00 | 6.80 | 9.30 | 9.30 | -40~175 |
MMJ65B0A02xx | MMJ65B0A02xx_E.pdf | 650 | 200 | 1.30 | 1.60 | -30~30 | 5.00 | 6.80 | 10.60 | 10.60 | -40~175 |
MMJC575A01xx | MMJC575A01xx_E.pdf | 1250 | 75 | 1.85 | 2.15 | -30~30 | 5.00 | 6.80 | 7.90 | 7.90 | -40~175 |
MMJC5A0A01xx | MMJC5A0A01xx_E.pdf | 1250 | 100 | 1.85 | 2.15 | -30~30 | 5.00 | 6.80 | 8.80 | 8.80 | -40~175 |
MMJC5A5A01xx | MMJC5A5A01xx_E.pdf | 1250 | 150 | 1.85 | 2.15 | -30~30 | 5.00 | 6.80 | 10.50 | 10.50 | -40~175 |
MMJC5B0A01xx | MMJC5B0A01xx_E.pdf | 1250 | 200 | 1.85 | 2.15 | -30~30 | 5.00 | 6.80 | 11.90 | 11.90 | -40~175 |